sot23 npn planar small signal transistors issue 2 ? february 1995 partmarking details ? bcw71 ? k1 bcw72 ? k2 BCW71R ? k4 bcw72r ? k5 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v peak pulse current i cm 200 ma continuous collector current i c 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range tj:tstg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base cut-off current i cbo 100 10 na m a i e =0, v cb =20v i e =0, v cb =20v,t j =100c base-emitter voltage v be 550 700 mv i c =2.0ma, v ce =5v collector-emitter saturation voltage v ce(sat) 120 210 250 mv mv i c =10ma, i b =0.5ma i c =50ma, i b =2.5ma base-emitter saturation voltage v be(sat) 750 850 mv mv i c =10ma, i b =0.5ma i c =50ma, i b =2.5ma static forward bcw71 current transfer ratio bcw72 h fe 110 90 220 i c =10 m a, v ce =5v i c =2ma, v ce =5v 200 150 450 i c =10 m a, v ce =5v i c =2ma, v ce =5v transition frequency f t 300 mhz i c =10ma, v ce =5v f =35mhz collector capacitance c tc 4pfi e =i e =0, v cb =10v f =1mhz noise figure n 10 db i c =200 m a, v ce =5v r s =2k w , f =1khz b =200hz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices bcw71 bcw72 page no c b e sot23 c b e dim millimeters inches min max min max a 2.67 3.05 0.105 0.120 b 1.20 1.40 0.047 0.055 c ? 1.10 ? 0.043 d 0.37 0.53 0.0145 0.021 f 0.085 0.15 0.0033 0.0059 g nom 1.9 nom 0.075 k 0.01 0.10 0.0004 0.004 l 2.10 2.50 0.0825 0.0985 n nom 0.95 nom 0.37 bcw71 bcw72
sot23 npn planar small signal transistors issue 2 ? february 1995 partmarking details ? bcw71 ? k1 bcw72 ? k2 BCW71R ? k4 bcw72r ? k5 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v peak pulse current i cm 200 ma continuous collector current i c 100 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range tj:tstg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base cut-off current i cbo 100 10 na m a i e =0, v cb =20v i e =0, v cb =20v,t j =100c base-emitter voltage v be 550 700 mv i c =2.0ma, v ce =5v collector-emitter saturation voltage v ce(sat) 120 210 250 mv mv i c =10ma, i b =0.5ma i c =50ma, i b =2.5ma base-emitter saturation voltage v be(sat) 750 850 mv mv i c =10ma, i b =0.5ma i c =50ma, i b =2.5ma static forward bcw71 current transfer ratio bcw72 h fe 110 90 220 i c =10 m a, v ce =5v i c =2ma, v ce =5v 200 150 450 i c =10 m a, v ce =5v i c =2ma, v ce =5v transition frequency f t 300 mhz i c =10ma, v ce =5v f =35mhz collector capacitance c tc 4pfi e =i e =0, v cb =10v f =1mhz noise figure n 10 db i c =200 m a, v ce =5v r s =2k w , f =1khz b =200hz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices bcw71 bcw72 page no c b e sot23 c b e dim millimeters inches min max min max a 2.67 3.05 0.105 0.120 b 1.20 1.40 0.047 0.055 c ? 1.10 ? 0.043 d 0.37 0.53 0.0145 0.021 f 0.085 0.15 0.0033 0.0059 g nom 1.9 nom 0.075 k 0.01 0.10 0.0004 0.004 l 2.10 2.50 0.0825 0.0985 n nom 0.95 nom 0.37 bcw71 bcw72
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